Datasheet4U Logo Datasheet4U.com

2SA2196 - PNP / NPN Epitaxial Planar Silicon Transistors

Features

  • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications ( ) : 2SA2196 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEB.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA2195 Silicon PNP Transistor Toshiba
2SA2197 PNP / NPN Epitaxial Planar Silicon Transistors ON Semiconductor
2SA2101 Silicon PNP epitaxial planar type Transistor Panasonic Semiconductor
2SA2102 Silicon PNP epitaxial planar type Transistor Panasonic Semiconductor
2SA2112 Bipolar Transistor ON Semiconductor

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SA2192 PNP Epitaxial Planar Silicon Transistor
2SA2197 PNP / NPN Epitaxial Planar Silicon Transistors
2SA2112 PNP Transistors
2SA2117 PNP / NPN Epitaxial Planar Silicon Transistors
2SA2124 PNP Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Ordering number : ENA0462 2SA2196 / 2SC6101 SANYO Semiconductors DATA SHEET 2SA2196 / 2SC6101 Applications • PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation.
Published: |