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SSM6P49NU - P-Channel MOSFET

Features

  • (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment UDFN6 SSM6P49NU 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2016-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-11 2021-09-17 Rev.2.0 SSM6P49NU 4. Absolute Maximum Ratings (Note) (Unless o.

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Full PDF Text Transcription

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MOSFETs Silicon P-Channel MOS SSM6P49NU 1. Applications • Power Management Switches 2. Features (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment UDFN6 SSM6P49NU 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2016-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-11 2021-09-17 Rev.2.0 SSM6P49NU 4.
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