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SSM6P40TU
TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type
SSM6P40TU
○ Power Management Switch Applications ○ High-Speed Switching Applications
• • • 4.0 V drive P-ch, 2-in-1 Low ON-resistance: Unit: mm
2.1±0.1 1.7±0.1 0.65 0.65 1 2 3 6 5 4 0.166±0.05
Ron = 403mΩ (max) (@VGS = –4 V) Ron = 226mΩ (max) (@VGS = –10 V)
Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common)
Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating -30 ± 20 -1.4 -2.8 500 150 −55 to150 Unit V V A mW °C °C 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1
0.7±0.05
UF6
JEDEC ―
Note: Using continuously under heavy loads (e.g.
SSM6P40TU Datasheet
