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SSM6P26TU www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
SSM6P26TU
High Speed Switching Applications
Unit: mm • • Optimum for high-density mounting in small packages Low on-resistance: Ron = 230mΩ (max) (@VGS = -4 V) Ron = 330mΩ (max) (@VGS = -2.5 V)
0.65 0.65 2.0±0.1 2.1±0.1 1.7±0.1 +0.1 0.3-0.05
Ron = 980mΩ (max) (@VGS = -1.8 V)
1.3±0.1
1 2 3
6 5 4
(Q1, Q2 Common)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating -20 ±8 -0.5 -1.5 500 150 −55~150 Unit V V A mW °C °C
0.7±0.05
1.Source1 2.Gate1 3.Drain2
4.Source2 5.Gate2 6.
SSM6P26TU Datasheet
