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SSM5G11TU - Silicon Epitaxial Schottky Barrier Diode

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Part number SSM5G11TU
Manufacturer Toshiba Semiconductor
File Size 925.33 KB
Description Silicon Epitaxial Schottky Barrier Diode
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SSM5G11TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G11TU DC-DC Converter Applications • • • 4-V drive Combined a P-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation Channel temperature Symbol VDSS VGSS ID IDP PD (Note 1) Tch Rating -30 ± 20 -1.4 A -2.8 500 150 mW °C Unit V V Schottky Barrier Diode (Ta = 25°C) Characteristics Repetitive peak reverse voltage Average forward current Peak one cycle surge forward current Junction temperature Symbol VRRM IF (AV) IFSM Tj Rating 30 0.7 2 (50Hz) 125 Unit V A A °C UFV JEDEC JEITA TOSHIBA 2-2R1A Weight: 7 mg (typ.
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