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SSM5G02TU - DC-DC Converter

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Part number SSM5G02TU
Manufacturer Toshiba Semiconductor
File Size 219.44 KB
Description DC-DC Converter
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SSM5G02TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G02TU DC-DC Converter • Combined Pch MOSFET and Schottky Diode into one Package. • Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Symbol Rating Unit VDS −12 V VGSS ±12 V ID −1.0 A IDP (Note 2) −2.0 PD (Note 1) 0.5 W t = 10s 0.8 Tch 150 °C Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY DIODE Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Average forward current Peak one cycle surge forward current (non-repetitive) Junction temperature VRM VR IO IFSM Tj 15 V 12 V 0.
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