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SSM5G10TU - Silicon Epitaxial Schottky Barrier Diode

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Part number SSM5G10TU
Manufacturer Toshiba Semiconductor
File Size 906.40 KB
Description Silicon Epitaxial Schottky Barrier Diode
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SSM5G10TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G10TU DC-DC Converter Applications • • • 1.8-V drive Combines a P-channel MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage DC Drain current Pulse Drain power dissipation Channel temperature Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10 s Tch Rating −20 ±8 −1.5 −3.0 0.5 W 0.8 150 °C Unit V V A UFV JEDEC Schottky Barrier Diode (Ta = 25°C) Characteristics Repetitive peak reverse voltage Average forward current Peak one cycle surge forward current Junction temperature Symbol VRRM IF(AV) IFSM Tj Rating 20 0.
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