SSM3J36TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
○ Power Management Switches
- - 1.5-V drive Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) : Ron = 2.70 Ω (max) (@VGS = -1.8 V) : Ron = 1.60 Ω (max) (@VGS = -2.8 V) : Ron = 1.31 Ω (max) (@VGS = -4.5 V)
0.65±0.05 2.0±0.1 1 2 3 0.166±0.05
1: Gate 2: Source 3: Drain
Unit: mm
2.1±0.1 1.7±0.1 +0.1 0.3 -0.05
Absolute Maximum Ratings (Ta = 25 °C)
Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note1) PD (Note2) Tch Tstg Rating -20 ±8 -330 -660 500 800 150
- 55 to 150 Unit V V m A m W °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.) may cause this product to decrease in the JEITA ― reliability significantly even if the operating conditions (i.e. operating...
