SSM3J36MFV
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
○ Power Management Switches
- - 1.5-V drive Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) : Ron = 2.70 Ω (max) (@VGS = -1.8 V) : Ron = 1.60 Ω (max) (@VGS = -2.8 V) : Ron = 1.31 Ω (max) (@VGS = -4.5 V) Unit: mm
0.22±0.05 1.2±0.05
Absolute Maximum Ratings (Ta = 25 °C)
1.2±0.05 0.8±0.05
Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse
Symbol VDSS VGSS ID IDP PD (Note1) Tch Tstg
Rating -20 ±8 -330 -660 150 150
- 55 to 150
Unit V V
1 2 3 m W °C °C
0.5±0.05
1.
Gate Source
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the...
