Field Effect Transistor Silicon P-Channel MOS Type
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SSM3J16TE
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J16TE
High Speed Switching Applications Analog Switch Applications
Unit: mm • • Small package Low on-resistance : Ron = 8 Ω (max) (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) : Ron = 45 Ω (max) (@VGS = −1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD Tch Tstg Rating −20 ±10 −100 −200 100 150 −55~150 Unit V V mA mW °C °C
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
1: Gate 2: Source 3: Drain
Note:
JEDEC ― Using continuously under heavy loads (e.g.
SSM3J16TE Datasheet
