Field Effect Transistor Silicon P-Channel MOS Type
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SSM3J16FV
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
SSM3J16FV
High Speed Switching Applications
Analog Switch Applications
• Small package • Low on-resistance
: RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) : RDS(ON) = 45 Ω (max) (@VGS = −1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
1.2±0.05 0.8±0.05
0.22±0.05
0.32±0.05
0.13±0.05
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC Pulse
Power dissipation
Channel temperature
Storage temperature range
VDSS
−20
V
VGSS
±10
V
ID
−100
mA
IDP
−200
PD(Note1)
150
mW
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g.
SSM3J16FV Datasheet
