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SSM3J16FS
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
SSM3J16FS
High Speed Switching Applications Analog Switch Applications
• Small package
• Low on-resistance
: RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) : RDS(ON) = 45 Ω (max) (@VGS = −1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC Pulse
Power dissipation
Channel temperature
Storage temperature range
VDSS VGSS
ID IDP PD Tch Tstg
−20
V
±10
V
−100 mA
−200
100
mW
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.
SSM3J16FS Datasheet
