The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SSM3J16CT
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
SSM3J16CT
High Speed Switching Applications
Analog Switch Applications
• Small package • Low on-resistance
: RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) : RDS(ON) = 45 Ω (max) (@VGS = −1.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC Pulse
Power dissipation
Channel temperature
Storage temperature range
VDSS
−20
V
VGSS
±10
V
ID
−100
mA
IDP
−200
PD(Note1)
100
mW
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM3J16CT Datasheet
