Datasheet4U Logo Datasheet4U.com

XP134A1275SR - Power MOSFET

Description

The XP134A1275SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Two FET devices are built-into the one package.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

Features

  • Low On-State Resistance :Rds(on)=0.075Ω(Vgs=-4.5V) :Rds(on)=0.115Ω(Vgs=-2.5V) Ultra High-Speed Switching Driving Voltage : -2.5V P-Channel Power MOSFET DMOS Structure 2 FET Devices Built-in Package : SOP-8.
  • PIN.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
XP1334GEU N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO
XP1000 GaAs MMIC Power Amplifier Mimix Broadband
XP1000-BD GaAs MMIC Power Amplifier Mimix Broadband
XP1001 GaAs MMIC Power Amplifier Mimix Broadband
XP1003 GaAs MMIC Power Amplifier Mimix Broadband

Other Datasheets by Torex Semiconductor

Part Number Description
XP131A0150SR Power MOS FET
XP131A0232SR Power MOS FET
XP131A0526SR Power MOS FET
XP131A0616SR Power MOS FET
XP131A1145SR Power MOS FET

Full PDF Text Transcription

Click to expand full text
XP134A1275SR Power MOSFET ETR1115_001 ■GENERAL DESCRIPTION The XP134A1275SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built-into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■FEATURES Low On-State Resistance :Rds(on)=0.075Ω(Vgs=-4.5V) :Rds(on)=0.115Ω(Vgs=-2.5V) Ultra High-Speed Switching Driving Voltage : -2.
Published: |