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TDG650E60 Datasheet Bottom- or Top-side Cooled 650V E-mode GaN FET

Manufacturer: Teledyne

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Datasheet Details

Part number TDG650E60
Manufacturer Teledyne
File Size 2.66 MB
Description Bottom- or Top-side Cooled 650V E-mode GaN FET
Download Download datasheet TDG650E60 Download (PDF)

General Description

Teledyne’s TDG650E60 is an enhancement mode GaN- on-silicon power transistor based on GaN Systems Technology.

The properties of GaN ensure high current, high voltage breakdown combined with very high switching frequency.

GaN Systems implements patented Island Technology® cell layout for high-current performance and excellent thermal characteristics.

Overview

TDG650E60 Bottom- or Top-side Cooled 650 V E-mode GaN FET Product Specification April.

Key Features

  • 650 V enhancement mode power switch with P-GaN gate structure.
  • Bottom- or Top-side cooled configuration.
  • RDS(on) = 25 mΩ (typ).
  • IDS(max) = 60 A.
  • Ultra-low FOM Island Technology® die.
  • Ultra-low inductance GaNPX® package.
  • Easy gate drive requirements (0 V to 6 V) with 7V tolerance.
  • Transient tolerant gate drive (-20 / +10 V) 1μs.
  • Very high switching frequency (> 10 MHz).
  • Reverse current capability.

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