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TDG650E602TSP Datasheet Space GaN E-mode Transistor

Manufacturer: Teledyne

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Datasheet Details

Part number TDG650E602TSP
Manufacturer Teledyne
File Size 1.61 MB
Description Space GaN E-mode Transistor
Download Download datasheet TDG650E602TSP Download (PDF)

General Description

The TDG650E602TSP is a space-grade, 650 V, enhancement mode, GaN-on-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

The part based on GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Overview

TDG650E602TSP Space GaN E-mode Transistor Product Specficaton.

Key Features

  • Class one / Level one Production Screening.
  • Lot Acceptance Test options available.
  • 650 V enhancement mode power transistor.
  • Top-cooled, low inductance GaNPX® package.
  • RDS(on) = 25 mΩ.
  • IDS(max) = 60 A.
  • Ultra-low FOM.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • Very high switching frequency ( > 10 MHz).
  • Fast and controllable fall and rise times.

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