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TDG650E30BSP - Bottom-side cooled 650 V E-mode GaN transistor

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TELEDYNE

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TDG650E30BSP Bottom-side cooled 650 V E-mode GaN transistor by TELEDYNE - Datasheet Preview — Datasheet preview – TDG650E30BSP

Datasheet Details

Part number	TDG650E30BSP
Manufacturer	TELEDYNE
File Size	1.52 MB
Description	Bottom-side cooled 650 V E-mode GaN transistor
Datasheet	TDG650E30BSP Datasheet
Additional preview pages of the TDG650E30BSP datasheet.

Product details

Description

The TDG650E30BSP is an enhancement mode GaN-onsilicon power transistor based on GaN Systems Technology.

Features

650 V enhancement mode power transistor.
Bottom-side cooled configuration.
RDS(on) = 50 mΩ.
IDS(max) = 30 A.
Ultra-low FOM Island Technology® die.
Low inductance GaNPX® package.
Easy gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10V).
Very high switching frequency (> 100 MHz).
Fast and controllable fall and rise times.
Reverse current capability.
Zero rever.

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Published: Nov 23, 2025 |