TSM16ND50CI - N-Channel Power MOSFET

Taiwan Semiconductor

Key Features

100% UIS and Rg tested.
Advanced planar process.
Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC.
Halogen-free according to IEC 61249-2-21 KEY.

TSM16ND50CI n-channel power mosfet by Taiwan Semiconductor - Datasheet Preview

Datasheet Details

Part number	TSM16ND50CI
Manufacturer	Taiwan Semiconductor
File Size	257.27 KB
Description	N-Channel Power MOSFET
Datasheet	TSM16ND50CI Datasheet

More Datasheets from Taiwan Semiconductor

Part Number	Description
TSM160N10	100V N-Channel Power MOSFET
TSM160P02	P-Channel Power MOSFET
TSM100N06	60V N-Channel Power MOSFET
TSM10N80	800V N-Channel Power MOSFET
TSM10N80CI	800V N-Channel Power MOSFET
TSM10N80CZ	800V N-Channel Power MOSFET
TSM10P06	60V P-Channel MOSFET
TSM10P06CP	60V P-Channel MOSFET
TSM120N06LCP	N-Channel Power MOSFET
TSM120N06LCR	N-Channel Power MOSFET

Full PDF Text Transcription for TSM16ND50CI (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TSM16ND50CI. For precise diagrams, tables, and layout, please refer to the original PDF.

TSM16ND50CI Taiwan Semiconductor N-Channel Power MOSFET 500V, 16A, 0.35Ω FEATURES ● 100% UIS and Rg tested ● Advanced planar process ● Compliant to RoHS Directive 2011/65...

View more extracted text

tested ● Advanced planar process ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 500 0.