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TSM160P02 - P-Channel Power MOSFET

General Description

only.

No license, express or implied, to any intellectual property rights is granted by this document.

Key Features

  • Improved dV/dt capability.
  • Fast Switching.
  • Suitable for 1.8V drive.

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Full PDF Text Transcription for TSM160P02 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TSM160P02. For precise diagrams, tables, and layout, please refer to the original PDF.

TSM160P02 Taiwan Semiconductor P-Channel Power MOSFET -20V, -11A, 16mΩ FEATURES ● Improved dV/dt capability ● Fast Switching ● Suitable for 1.8V drive applications ● Pb-f...

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ability ● Fast Switching ● Suitable for 1.8V drive applications ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound APPLICATION ● Load Switch ● Networking KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS VGS = -4.5V RDS(on) (max) VGS = -2.5V VGS = -1.8V Qg -20 16 22 28 27 V mΩ nC SOP-8 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±10 Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C ID IDM -11 -7 -44 Total Power Dissipation @ T