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TSM160N10 - 100V N-Channel Power MOSFET

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Key Features

  • Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max. ) Low gate charge typical @ 154nC (Typ. ) Low Crss typical @ 260pF (Typ. ) Block Diagram Ordering Information Part No. TSM160N10CZ C0 Package TO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current TC=70°C TA=25°C TA=70°C Drain Current-Pulsed Note 1 Avalanche Current, L=0.5mH Avalanche Ene.

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Full PDF Text Transcription for TSM160N10 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TSM160N10. For precise diagrams, tables, and layout, please refer to the original PDF.

TSM160N10 100V N-Channel Power MOSFET TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 5.5 @ VGS =10V ID (A) 160 Features ● ● ● ●...

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ARY VDS (V) 100 RDS(on)(mΩ) 5.5 @ VGS =10V ID (A) 160 Features ● ● ● ● Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 260pF (Typ.) Block Diagram Ordering Information Part No. TSM160N10CZ C0 Package TO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current TC=70°C TA=25°C TA=70°C Drain Current-Pulsed Note 1 Avalanche Current, L=0.5mH Avalanche Energy, L=0.