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TSM10N80CZ - 800V N-Channel Power MOSFET

Download the TSM10N80CZ datasheet PDF. This datasheet also covers the TSM10N80 variant, as both devices belong to the same 800v n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • Low RDS(ON) 1.05Ω (Max. ) Low gate charge typical @ 53nC (Typ. ) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM10N80CZ C0 TSM10N80CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pc / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current.
  • Peak Diode Recovery dv/dt (Note 3) Single Pulse Avalanche Energy (Note 2) Avalanch.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TSM10N80-TaiwanSemiconductor.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by Taiwan Semiconductor

Part Number Description
TSM10N80CI 800V N-Channel Power MOSFET
TSM10N80 800V N-Channel Power MOSFET
TSM100N06 60V N-Channel Power MOSFET
TSM10P06 60V P-Channel MOSFET
TSM10P06CP 60V P-Channel MOSFET
TSM120N06LCP N-Channel Power MOSFET
TSM120N06LCR N-Channel Power MOSFET
TSM120N10PQ56 N-Channel Power MOSFET
TSM120NA03CR N-Channel Power MOSFET
TSM126 N-Channel Depletion-Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 800 1.05 @ VGS =10V ID (A) 9.5 General Description The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features ● ● ● Low RDS(ON) 1.05Ω (Max.) Low gate charge typical @ 53nC (Typ.) Improve dv/dt capability Block Diagram Ordering Information Part No.