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TSM120N10PQ56 - N-Channel Power MOSFET

General Description

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Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Low Gate Charge Ordering Information Part No. Package Packing TSM120N10PQ56 RLG PDFN56 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain.

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Full PDF Text Transcription (Reference)

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TSM120N10PQ56 100V N-Channel MOSFET PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value Unit VDS RDS(on)(max) 100 12 V mΩ Qg 145 nC Features ● Low On-Resistance ● Low Input Capacitance ● Low Gate Charge Ordering Information Part No. Package Packing TSM120N10PQ56 RLG PDFN56 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.