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TSM12N65 - 650V N-Channel Power MOSFET

General Description

The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • Low RDS(ON) 0.68Ω (Typ. ) Low gate charge typical @ 41nC (Typ. ) Low Crss typical @ 14.6pF (Typ. ) Fast Switching Block Diagram Ordering Information Part No. TSM12N65CI C0 Package ITO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current.
  • Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 2 Single P.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM12N65 650V N-Channel Power MOSFET ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 650 RDS(on)(Ω) 0.8 @ VGS =10V ID (A) 6 General Description The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Features ● ● ● ● Low RDS(ON) 0.68Ω (Typ.) Low gate charge typical @ 41nC (Typ.) Low Crss typical @ 14.6pF (Typ.) Fast Switching Block Diagram Ordering Information Part No.