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TP06L - P-Channel Enhancement-Mode Vertical CMOS Power FETs

Key Features

  • 0 Low threshold 0 High input impedance 0 Low input capacitance 0 Fast switching speeds 0 Low on resistance 0 Freedom from secondary breakdown 0 Low input and output leakage VGS(th) (max) -2.4V -2.4V TO-39 TP0602N2 TP0604N2 Order Number I Package TO-92 TP0602N3 SOW-20' - TP0604N3 TP0604WG DICE TP0602ND TP0604ND Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. Th.

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Datasheet Details

Part number TP06L
Manufacturer Supertex
File Size 222.51 KB
Description P-Channel Enhancement-Mode Vertical CMOS Power FETs
Datasheet download datasheet TP06L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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"§upertexinc. TP06L P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVossl BVoos -20V ROS(ON) (max) 2.00 -40V 2.00 'Same as SO·20 with 300 mil wide body. IO(ON) (min) -2.0A -2.0A Features 0 Low threshold 0 High input impedance 0 Low input capacitance 0 Fast switching speeds 0 Low on resistance 0 Freedom from secondary breakdown 0 Low input and output leakage VGS(th) (max) -2.4V -2.4V TO-39 TP0602N2 TP0604N2 Order Number I Package TO-92 TP0602N3 SOW-20' - TP0604N3 TP0604WG DICE TP0602ND TP0604ND Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.