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TP06C - P-Channel Enhancement-Mode Vertical CMOS Power FETs

Key Features

  • o Low threshold o High input impedance o Low input capacitance o Fast switching speeds o Low on resistance o Freedom from secondary breakdown o Low input and output leakage o Complementary N- and P-channel devices Advanced CMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the h.

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Datasheet Details

Part number TP06C
Manufacturer Supertex
File Size 225.65 KB
Description P-Channel Enhancement-Mode Vertical CMOS Power FETs
Datasheet download datasheet TP06C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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"§upertexinc. TP06C P-Channel Enhancement-Mode Vertical CMOS Power FETs Ordering Information BVoss I BVOGS -160V -200V ROS(ON) (max) 120 120 IO(ON) (min) -O.7SA -O.7SA VGS(th) (max) -2.4A -2.4A TO·39 TP0616N2 TP0620N2 Order Number I Package TO·92 TQ.220 TP0616N3 TP0616NS TP0620N3 TP0620NS DICE TP0616ND TP0620ND Features o Low threshold o High input impedance o Low input capacitance o Fast switching speeds o Low on resistance o Freedom from secondary breakdown o Low input and output leakage o Complementary N- and P-channel devices Advanced CMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.