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TP0616 - P-Channel Enhancement-Mode Vertical CMOS Power FETs

Key Features

  • s Low threshold.
  • -2.4 V max s High input impedance s Low input capacitance.
  • 85pF typical s Fast switching speeds s Low on resistance s Free from secondary breakdown s Low input and output leakage s Complementary N- and P-channel devices.

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Datasheet Details

Part number TP0616
Manufacturer Supertex
File Size 27.64 KB
Description P-Channel Enhancement-Mode Vertical CMOS Power FETs
Datasheet download datasheet TP0616 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TP0616 TP0620 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -160V RDS(ON) (max) 12Ω -200V 12Ω † MIL visual screening available ID(ON) (min) -0.75A -0.75A VGS(th) (max) -2.4V -2.4V Order Number / Package TO-92 TO-220 TP0616N3 — TP0620N3 TP0620N5 High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Features s Low threshold — -2.