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STN6562 - 4A Dual N-Channel Enhancement Mode MOSFET

Description

The STN6562 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STN6562
Manufacturer Stanson Technology
File Size 771.50 KB
Description 4A Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet STN6562 Datasheet

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Full PDF Text Transcription

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STN6562 Dual N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION The STN6562 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION TSOP-6 D1 S1 D2 62YW FEATURE ◆ 30V/4.0A, RDS(ON)=65mohm@VGS=10V ◆ 30V/2.2A, RDS(ON)=75mohm@VGS=4.5V ◆ 30V/1.5A, RDS(ON)=105mohm@VGS=2.
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