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SE3080G - N-Channel MOSFET

This page provides the datasheet information for the SE3080G, a member of the SE3080G-Sino N-Channel MOSFET family.

Description

This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

  • For a single MOSFET.
  • VDS = 30V.
  • RDS(ON) = 4.5mΩ @ VGS=10V Pin configurations See Diagram below DD 56 DD 78 1 2 34 S S S G DFN5.
  • 6 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junction Temperature Range Symbol VDS VGS ID PD EAS TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 30 ±20 80 170 83 306 -.

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Datasheet preview – SE3080G

Datasheet Details

Part number SE3080G
Manufacturer Sino-IC
File Size 339.73 KB
Description N-Channel MOSFET
Datasheet download datasheet SE3080G Datasheet
Additional preview pages of the SE3080G datasheet.

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Full PDF Text Transcription

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SE3080G N-Channel Enhancement-Mode MOSFET Revision: A General Description This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application Features For a single MOSFET  VDS = 30V  RDS(ON) = 4.
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