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SE3035 - N-Channel MOSFET

This page provides the datasheet information for the SE3035, a member of the SE3035-Sino N-Channel MOSFET family.

Description

Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Simple Drive Requirement Small Package Outline Surface Mount Device

Features

  • For a single MOSFET.
  • VDS = 30V.
  • RDS(ON) = 5.5mΩ @ VGS=10.
  • RDS(ON) = 9.5mΩ @ VGS=4.5 Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID PD TJ Rating 30 ±20 35 120 35 -55 to 150 Units V V A W ℃ ShangHai Sino-IC Microelectronic Co. , Ltd. 1. SE3035 Electrical Characteristics (TJ=25℃ unless o.

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Datasheet preview – SE3035

Datasheet Details

Part number SE3035
Manufacturer Sino-IC
File Size 612.51 KB
Description N-Channel MOSFET
Datasheet download datasheet SE3035 Datasheet
Additional preview pages of the SE3035 datasheet.

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Full PDF Text Transcription

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Apr 2015 SE3035 N-Channel Enhancement-Mode MOSFET Revision: A General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device Features For a single MOSFET  VDS = 30V  RDS(ON) = 5.5mΩ @ VGS=10  RDS(ON) = 9.5mΩ @ VGS=4.5 Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID PD TJ Rating 30 ±20 35 120 35 -55 to 150 Units V V A W ℃ ShangHai Sino-IC Microelectronic Co., Ltd. 1.
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