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SE3080A - N-Channel MOSFET

This page provides the datasheet information for the SE3080A, a member of the SE3080A-Sino N-Channel MOSFET family.

Description

excellent RDS(ON), low gate charge and low operation voltage.

This device is suitable for using as a load switch or in PWM applications.

Simple Drive Requirement Small Package Outline Surface Mount Device

Features

  • For a single MOSFET.
  • VDS = 30V.
  • RDS(ON) = 4.5mΩ @ VGS=10V(SE3080A).
  • RDS(ON) = 4.5mΩ @ VGS=10V(SE3080K) Pin configurations See Diagram below TO-252 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Derating factor Single pulse avalanche energy Operating Junction Temperature Range Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Symbol VDS VGS ID PD EAS.

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Datasheet preview – SE3080A

Datasheet Details

Part number SE3080A
Manufacturer Sino-IC
File Size 444.16 KB
Description N-Channel MOSFET
Datasheet download datasheet SE3080A Datasheet
Additional preview pages of the SE3080A datasheet.

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Full PDF Text Transcription

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SE3080A/K N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage. This device is suitable for using as a load switch or in PWM applications.  Simple Drive Requirement  Small Package Outline  Surface Mount Device Features For a single MOSFET  VDS = 30V  RDS(ON) = 4.5mΩ @ VGS=10V(SE3080A)  RDS(ON) = 4.
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