Click to expand full text
SSF2N60
Main Product Characteristics: VDSS 600V RDS(on) ID 3.6ohm(typ.) 2A
TO220
Marking and pin Assignm ent Schematic dia gram
Features and Benefits:
Advanced Process Technology Special designed for PWM, load switching dan gene ral pur pose applications Ultra low on-r esistance with low gate charg e Fastswitching and re verse b ody reco very 150 ℃ operati ng temperatur e
Description:
These N-Ch annel en hancement mode power field ef fect transistors are produced usin g silikron proprietary MOSFET te chnology. T his advance d technology has be en especially tailored t o minimize on-state resistance, provide superior switching performance, and withstand high ene rgy pulse in the avala nche and commutation mode.
SSF2N60 Datasheet
