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SSF20N50UH - MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

Features

  • TO-247.
  • Advanced Process Technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet preview – SSF20N50UH

Datasheet Details

Part number SSF20N50UH
Manufacturer Silikron
File Size 436.62 KB
Description MOSFET
Datasheet download datasheet SSF20N50UH Datasheet
Additional preview pages of the SSF20N50UH datasheet.

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Full PDF Text Transcription

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Main Product Characteristics VDSS RDS(on) ID 500V 0.2Ω (typ.) 20A ① Features and Benefits TO-247  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery SSF20N50UH Marking and Pin Assignment Schematic Diagram Description These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
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