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Main Product Characteristics
VDSS
600V
RDS(on) 3.6ohm(typ.)
ID 2A
Features and Benefits
TO-220
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product
SSF2N60
600V N-Channel MOSFET
Marking and Pin Assignment
Schematic Diagram
Description
These N-Channel enhancement mode power field effect transistors are produced using proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
SSF2N60 Datasheet
