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Main Product Characteristics
VDSS RDS(on)
ID
600V 3.7Ω (typ.)
2A
TO-252
Features and Benefits
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product
SSF2N60D2
600V N-Channel MOSFET Preliminary
Marking and Pin Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
SSF2N60D2 Datasheet
