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SSS1206 - N-Channel enhancement mode power field effect transistors

Datasheet Summary

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

  • TO-220.
  • Advanced Process Technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number SSS1206
Manufacturer SilikrON Semiconductor
File Size 465.02 KB
Description N-Channel enhancement mode power field effect transistors
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Full PDF Text Transcription

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Main Product Characteristics VDSS RDS(on) 120V 4mΩ (typ.) ID 180A ① Features and Benefits TO-220  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSS1206 Marking and pin Assignment Schematic diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
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