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SSS10N60A - Advanced Power MOSFET

Datasheet Summary

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ. ) SSS10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 5.1 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) D.

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Datasheet Details

Part number SSS10N60A
Manufacturer Fairchild Semiconductor
File Size 283.29 KB
Description Advanced Power MOSFET
Datasheet download datasheet SSS10N60A Datasheet
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www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSS10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 5.1 A TO-220F 1 2 3 1.Gate 2. Drain 3.
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