Datasheet4U Logo Datasheet4U.com

SSS4N80AS - Straight 1-Row BergStik II Headers

Datasheet Summary

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 800V Low RDS(ON) : 2.450 Ω (Typ. ) SSS4N80AS BVDSS = 800 V RDS(on) = 3.0 Ω ID = 2.8 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) D.

📥 Download Datasheet

Datasheet preview – SSS4N80AS

Datasheet Details

Part number SSS4N80AS
Manufacturer Fairchild Semiconductor
File Size 158.42 KB
Description Straight 1-Row BergStik II Headers
Datasheet download datasheet SSS4N80AS Datasheet
Additional preview pages of the SSS4N80AS datasheet.

📁 Similar Datasheet

  • SSS4N80 - N-Channel Power MOSFETS (Samsung)
  • SSS4N60 - N-CHANNEL MOSFET (Tuofeng Semiconductor)
  • SSS4N70 - N-Channel Power MOSFETS (Samsung)
  • SSS4008J8L - MOSFET (Silikron)
  • SSS1004 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
  • SSS1004 - N-Channel MOSFET (GOOD-ARK)
  • SSS1004A7 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
  • SSS1004AL - MOSFET (Silikron)
  • SSS1004L - MOSFET (Silikron)
  • SSS10N60 - N-CHANNEL MOSFET (Tuofeng)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 2.450 Ω (Typ.) SSS4N80AS BVDSS = 800 V RDS(on) = 3.0 Ω ID = 2.8 A TO-220F 1 2 3 1.Gate 2. Drain 3.
Published: |