Datasheet4U Logo Datasheet4U.com

SSS10R20BFU - MOSFET

Datasheet Summary

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

  • Low RDS(on) & FOM.
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • Fast switching and reverse body recovery.
  • 150℃ operating temperature.

📥 Download Datasheet

Datasheet preview – SSS10R20BFU

Datasheet Details

Part number SSS10R20BFU
Manufacturer Silikron
File Size 621.61 KB
Description MOSFET
Datasheet download datasheet SSS10R20BFU Datasheet
Additional preview pages of the SSS10R20BFU datasheet.

📁 Similar Datasheet

  • SSS1004 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
  • SSS1004 - N-Channel MOSFET (GOOD-ARK)
  • SSS1004A7 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
  • SSS10N60 - N-CHANNEL MOSFET (Tuofeng)
  • SSS10N60A - Advanced Power MOSFET (Fairchild Semiconductor)
  • SSS10N60B - N-Channel MOSFET (Fairchild Semiconductor)
  • SSS1206 - N-Channel MOSFET (GOOD-ARK)
  • SSS1206 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
  • SSS1206H - N-Channel MOSFET (GOOD-ARK)
  • SSS1206H - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)
Other Datasheets by Silikron

Full PDF Text Transcription

Click to expand full text
Main Product Characteristics VDSS 100V RDS(on) 17mΩ (typ.) ID 8A ① Features and Benefits  Low RDS(on) & FOM  Extremely low switching loss  Excellent stability and uniformity  Fast switching and reverse body recovery  150℃ operating temperature Applications  Consumer electronic power supply  Motor control  Synchronous-rectification  Isolated DC/DC convertor SOP-8 SSS10R20BFU Schematic Diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Published: |