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SSS1206H - N-Channel MOSFET

This page provides the datasheet information for the SSS1206H, a member of the SSS1206H-GOOD N-Channel MOSFET family.

Datasheet Summary

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

  • TO-247.
  • Advanced Process Technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet preview – SSS1206H

Datasheet Details

Part number SSS1206H
Manufacturer GOOD-ARK
File Size 1.06 MB
Description N-Channel MOSFET
Datasheet download datasheet SSS1206H Datasheet
Additional preview pages of the SSS1206H datasheet.

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Full PDF Text Transcription

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Main Product Characteristics VDSS 120V RDS(on) 4.7mΩ (typ.) ID 180A ① Features and Benefits TO-247  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature  Lead free product SSS1206H 120V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
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