SSF2429 - Battery protection

Datasheet Summary

Description

The SSF2429 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = -20V,ID =-5A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-2.5V S Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Marking and pin Assignment.

Silikron Semiconductor Co

📥 Download Datasheet

Datasheet Details

Part number	SSF2429
Manufacturer	SilikrON Semiconductor Co
File Size	355.49 KB
Description	Battery protection
Datasheet	SSF2429 Datasheet
Additional preview pages of the SSF2429 datasheet.

📁 Similar Datasheet

SSF2429 - 20V P-Channel MOSFET (GOOD-ARK)
SSF2429UP - MOSFET (Silikron)
SSF2418B - 20V Dual N-Channel MOSFET (GOOD-ARK)
SSF2418E - Dual N-Channel MOSFET (GOOD-ARK)
SSF2437E - MOSFET (Silikron)
SSF2445CU - MOSFET (Silikron)
SSF2449 - 20V P-Channel MOSFET (GOOD-ARK)
SSF2485 - MOSFET (Silikron)
SSF20K8NE-C - N-Channel Enhancement Mode Power MOSFET (SeCoS)
SSF20N50UH - MOSFET (Silikron)

Other Datasheets by Silikron Semiconductor Co

SSF2418E - MOSFET
SSF2449 - PWM applications
SSF2300A - Battery protection
SSF2300B - Battery protection
SSF2301 - PWM applications
SSF2301B - PWM applications
SSF2301C - PWM applications
SSF2302 - Battery protection

Full PDF Text Transcription

Click to expand full text

SSF2429 www.DataSheet4U.com DESCRIPTION The SSF2429 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. D G GENERAL FEATURES ● VDS = -20V,ID =-5A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-2.

Published: Mar 6, 2010 |