Datasheet4U Logo Datasheet4U.com

SSF2429UP - MOSFET

Datasheet Summary

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

  • SOT23-6.
  • Advanced trench MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

📥 Download Datasheet

Datasheet preview – SSF2429UP

Datasheet Details

Part number SSF2429UP
Manufacturer Silikron
File Size 551.48 KB
Description MOSFET
Datasheet download datasheet SSF2429UP Datasheet
Additional preview pages of the SSF2429UP datasheet.

📁 Similar Datasheet

  • SSF2429 - Battery protection (Silikron Semiconductor Co)
  • SSF2429 - 20V P-Channel MOSFET (GOOD-ARK)
  • SSF2418B - 20V Dual N-Channel MOSFET (GOOD-ARK)
  • SSF2418E - MOSFET (Silikron Semiconductor Co)
  • SSF2418E - Dual N-Channel MOSFET (GOOD-ARK)
  • SSF2449 - PWM applications (Silikron Semiconductor Co)
  • SSF2449 - 20V P-Channel MOSFET (GOOD-ARK)
  • SSF20K8NE-C - N-Channel Enhancement Mode Power MOSFET (SeCoS)
  • SSF20N60S - 600V N-Channel MOSFET (Super Semiconductor)
  • SSF20NS60F - 600V N-Channel MOSFET (GOOD-ARK)
Other Datasheets by Silikron

Full PDF Text Transcription

Click to expand full text
Main Product Characteristics: VDSS -20V RDS(on) 29 mΩ(typ.) ID -5A Features and Benefits: SOT23-6 ◼ Advanced trench MOSFET process technology ◼ Special designed for PWM, load switching and general purpose applications ◼ Ultra low on-resistance with low gate charge ◼ Fast switching and reverse body recovery ◼ 150℃ operating temperature SSF2429UP Marking and Pin Assignment D G S Schematic Diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
Published: |