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Main Product Characteristics
N-ch
P-ch
VDSS RDSon(typ.)
20V 22 mΩ
-20V 62 mΩ
ID
4.9A -2.9A
SSF2445CU
2145C
SOT23-6
Marking and Pin Assignments
Schematic Diagram
Features and Benefits
Advanced trench MOSFET process technology Special designed for load switching and buttery
protection applications 150°C operating temperature
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in load switching and a wide variety of other applications
Absolute Max Rating
Symbol
ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS TJ TSTG
Parameter
Continuous Drain Current, VGS @ 4.