Datasheet4U Logo Datasheet4U.com

SVT120N08S - 80V N-CHANNEL MOSFET

This page provides the datasheet information for the SVT120N08S, a member of the SVT120N08T 80V N-CHANNEL MOSFET family.

Datasheet Summary

Description

SVT120N08T/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 120A,80V, RDS(on)(typ. )=7mΩ@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

📥 Download Datasheet

Datasheet preview – SVT120N08S

Datasheet Details

Part number SVT120N08S
Manufacturer Silan Microelectronics
File Size 241.85 KB
Description 80V N-CHANNEL MOSFET
Datasheet download datasheet SVT120N08S Datasheet
Additional preview pages of the SVT120N08S datasheet.

📁 Similar Datasheet

  • SVT12120U - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT12150U - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10100U - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10100UB - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10120V - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10120VB - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10150V - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10150VB - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT1080XB - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT15100L - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
Other Datasheets by Silan Microelectronics

Full PDF Text Transcription

Click to expand full text
SVT120N08T/S_Datasheet 120A, 80V N-CHANNEL MOSFET DESCRIPTION SVT120N08T/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems . FEATURES  120A,80V, RDS(on)(typ.)=7mΩ@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No.
Published: |