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SVT10111ND - 100V N-CHANNEL MOSFET

Datasheet Summary

Description

SVT10111ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Features

  • 14A,100V, RDS(on)(typ. )=85m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

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Datasheet Details

Part number SVT10111ND
Manufacturer Silan Microelectronics
File Size 312.38 KB
Description 100V N-CHANNEL MOSFET
Datasheet download datasheet SVT10111ND Datasheet
Additional preview pages of the SVT10111ND datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVT10111ND_Datasheet 14A, 100V N-CHANNEL MOSFET DESCRIPTION SVT10111ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is widely used in UPS, Power Management for Inverter Systems . FEATURES  14A,100V, RDS(on)(typ.)=85m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.
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