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SVT10500PD - P-CHANNEL MOSFET

Datasheet Summary

Description

SVT10500PD is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Features

  • -30A，-100V，RDS(on)(typ. ) =35m@VGS=-10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 1 3 TO-252-2L KEY.

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Datasheet preview – SVT10500PD

Datasheet Details

Part number SVT10500PD
Manufacturer Silan Microelectronics
File Size 373.17 KB
Description P-CHANNEL MOSFET
Datasheet download datasheet SVT10500PD Datasheet
Additional preview pages of the SVT10500PD datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVT10500PD_Datasheet -30A, -100V P CHANNEL MOSFET DESCRIPTION SVT10500PD is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in UPS, Power Management for Inverter Systems. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  -30A，-100V，RDS(on)(typ.) =35m@VGS=-10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability  100% avalanche tested  Pb-free lead plating  RoHS compliant 1 3 TO-252-2L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.
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