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SVT03100ND - 30V N-CHANNEL MOSFET

Datasheet Summary

Description

SVT03100ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Features

  • 60A, 30V, RDS(on)(typ. )=8.5m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

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Datasheet Details

Part number SVT03100ND
Manufacturer Silan Microelectronics
File Size 306.08 KB
Description 30V N-CHANNEL MOSFET
Datasheet download datasheet SVT03100ND Datasheet
Additional preview pages of the SVT03100ND datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVT03100ND_Datasheet 60A, 30V N-CHANNEL MOSFET DESCRIPTION SVT03100ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is widely used in UPS, Power Management for Inverter Systems. FEATURES  60A, 30V, RDS(on)(typ.)=8.5m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.
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