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SVS7N70MJD2 - 700V SUPER JUNCTION MOS POWER TRANSISTOR

This page provides the datasheet information for the SVS7N70MJD2, a member of the SVS7N70FD2 700V SUPER JUNCTION MOS POWER TRANSISTOR family.

Datasheet Summary

Description

SVS7N70F(D)(MJ)(S)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L 1 3 TO-263-2L.
  • 7A, 700V, RDS(on)(typ. )=0.52@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 1 23 TO-251J-3L 1 23 TO-220F-3L.

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Datasheet preview – SVS7N70MJD2

Datasheet Details

Part number SVS7N70MJD2
Manufacturer Silan Microelectronics
File Size 393.31 KB
Description 700V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVS7N70MJD2 Datasheet
Additional preview pages of the SVS7N70MJD2 datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVS7N70F/D/MJ/S/D2_Datasheet 7A, 700V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N70F(D)(MJ)(S)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L 1 3 TO-263-2L  7A, 700V, RDS(on)(typ.)=0.
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