SVS7N60FJD2 Datasheet PDF (600V DP MOS POWER TRANSISTOR) | Download Silan Microelectronics SVS7N60FJD2

SVS7N60FJD2 - 600V DP MOS POWER TRANSISTOR

Description

SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

7A,600V, RDS(on)(typ. )=0.48@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Enhanced avalanche capability.
Extreme dv/dt rated.
High peak current capability.

Datasheet Details

Part number	SVS7N60FJD2
Manufacturer	Silan Microelectronics
File Size	483.86 KB
Description	600V DP MOS POWER TRANSISTOR
Datasheet	SVS7N60FJD2 Datasheet
Additional preview pages of the SVS7N60FJD2 datasheet.

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Full PDF Text Transcription

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SVS7N60F(FJ)(D)D2_Datasheet 7A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies. FEATURES  7A,600V, RDS(on)(typ.)=0.48@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Enhanced avalanche capability  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No.

Published: Mar 9, 2020 |