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SVS7N65DD2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

This page provides the datasheet information for the SVS7N65DD2, a member of the SVS7N65DD2TR 650V SUPER JUNCTION MOS POWER TRANSISTOR family.

Datasheet Summary

Description

SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 2 1 3 12 3 TO-251J-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L.
  • 7A,650V, RDS(on)(typ. )=0.55@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Enhanced avalanche capability.
  • Extreme dv/dt rated.
  • High peak current capability 12 3 TO-220FJ-3L 12 3 TO-220F-3L.

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Datasheet preview – SVS7N65DD2

Datasheet Details

Part number SVS7N65DD2
Manufacturer Silan Microelectronics
File Size 285.21 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVS7N65DD2 Datasheet
Additional preview pages of the SVS7N65DD2 datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVS7N65D(F)(MJ)(FJ)D2_Datasheet 7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies, Lighting, Adapters, etc. FEATURES 2 1 3 12 3 TO-251J-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L  7A,650V, RDS(on)(typ.)=0.
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