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SVS7N65MJ - 650V SUPER JUNCTION MOS POWER TRANSISTOR

This page provides the datasheet information for the SVS7N65MJ, a member of the SVS7N65F 650V SUPER JUNCTION MOS POWER TRANSISTOR family.

Description

SVS7N65F/D/MJ is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 7A, 650V, RDS(on)(typ. )=0.55@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 123 TO-220F-3L 123 TO-251J-3L.

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Datasheet preview – SVS7N65MJ

Datasheet Details

Part number SVS7N65MJ
Manufacturer Silan Microelectronics
File Size 344.32 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVS7N65MJ Datasheet
Additional preview pages of the SVS7N65MJ datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVS7N65F/D/MJ_Datasheet 7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS7N65F/D/MJ is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L FEATURES  7A, 650V, RDS(on)(typ.)=0.
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